Aluminium Nitride Ceramic Tray – High Thermal Conductivity, Electrical Insulation, Precision Machined

• Customization: Available
• Application: Aerospace, Electronics, Refractory, Semiconductor
• Grain Size: <100nm
• Model NO.: 100*100*3.5 140*140*30
• Purity: 99%
• Type: Ceramic Plate
• Main Material: Andalusite, Alumina
• Working Temperature: <1600ºC
• Flatness: <0.5mm
• Colour: Pure White
• V Shape Angle: Can Be Customized
• Transport Package: Wooden Boxes
• Specification: 100× 100× 3 mm, 150*150*3.
• Trademark: Moat City
• Origin: China
• HS Code: 6909190090
• Production Capacity: 1000000

Product Description

Aluminium Nitride Tray [MH-ALNC995 -AluminiumNitride]

Product Features

Introducing our high-performance Aluminum Nitride (AlN) Ceramics, designed for advanced electronic and thermal management applications:

• Exceptional Thermal Conductivity: Provides thermal conductivity 5-10 times higher than alumina ceramics, making it ideal for applications requiring efficient heat dissipation.
• Low Dielectric Constant: Ensures low dielectric loss, making it suitable for high-frequency electronic applications.
• Reliable Insulating Properties: Offers excellent electrical insulation, ensuring operational safety in high-voltage conditions.
• High Mechanical Strength: With a flexural strength of 382.70 MPa, AlN ceramics provide robust support under mechanical stress, even at elevated temperatures.
• High-Temperature and Chemical Resistance: Resistant to high temperatures (up to 1600°C in an inert atmosphere) and corrosion, ensuring durability in harsh environments.
• Thermal Expansion Compatibility with Silicon: The thermal expansion coefficient of 2.805 x 10/°C closely matches that of silicon, making it ideal for semiconductor applications.

Applications

Aluminum Nitride ceramics are ideal for:

• High-Brightness LEDs Production: Provides efficient heat dissipation for enhanced LED performance.
• Substrate Material for Power Electronics: Ensures reliable thermal management and electrical insulation.
• Optical Communication Device Production: Low dielectric constant and high thermal conductivity make it perfect for high-frequency applications.
• Automotive Electronics: Ensures durability and performance in automotive electronics requiring robust heat dissipation.
• Semiconductor and CVD Manufacturing: Excellent high-temperature performance and thermal expansion compatibility with silicon.
• Optical Devices: Used in high-performance optical components requiring thermal and electrical insulation.

Technical Highlights

• High Thermal Conductivity: With a value of ≥170 W/m•K, AlN ceramics are highly efficient at heat management, essential for high-power applications.
• Superior Volume Resistivity: At 1.4 x 10¹ Ω•cm, the ceramics maintain excellent electrical insulation, even in high-temperature conditions.
• Chemical Durability: Low corrosion rate of 0.97 mg/cm² ensures long service life in chemically aggressive environments.
• Thermal Shocking Resistance: No cracks under rapid temperature changes, demonstrating superior resilience in thermal cycling applications.

Technical Parameters

Parameter	Value
AlN Purity (%)	96
Bulk Density (g/cm³)	3.335
Water Absorption (%)	0.00
Flexural Strength (MPa)	382.70
Dielectric Constant (MHz)	8.56
Thermal Expansion (20~300°C) (10/°C)	2.805
Thermal Conductivity (W/m•K)	≥170
Chemical Durability (mg/cm²)	0.97
Volume Resistivity (Ω•cm)	1.4 x 10¹
Dielectric Strength (kV/mm)	18.45
Surface Roughness Ra (µm)	0.3-0.5
Camber (Length ‰)	≤2
Max. Operating Temperature in Air (°C)	900°C ~ 1000°C
Max. Operating Temperature in Inert Atmosphere (°C)	<1600°C