Silicon Nitride Bonded Silicon Carbide Support Plate for High-Temperature Kiln Use

• Customization: Available
• Application: Aerospace, Electronics, Refractory, Semiconductor
• Grain Size: 1-10um
• Model NO.: 300*300*20
• Purity: 99%
• Type: Ceramic Plate
• Main Material: Andalusite, Alumina
• Working Temperature: <1450ºC
• Flatness: <0.5mm
• Colour: Gray-Black
• V Shape Angle: Can Be Customized
• Transport Package: Wooden Boxes
• Specification: 300*300*20
• Trademark: Moat City
• Origin: China
• HS Code: 6903900090
• Production Capacity: 1000000

Product Description

Silicon Nitride bonded Silicon Carbide Plate [MM-XG-SiC75]

Product Features

Introducing our high-performance Silicon Nitride Bonded Silicon Carbide (SiN-SiC) plates, specially designed to deliver excellent thermal and mechanical performance:

• Exceptional Thermal Shock Resistance: Engineered to withstand extreme temperature changes without compromising material integrity.
• High Strength and Durability: Offers outstanding flexural strength and wear resistance, even in high-temperature environments.
• Wear and Corrosion Resistance: Designed for industries requiring long-lasting materials in challenging conditions such as sintering processes.

Applications

Silicon Nitride Bonded Silicon Carbide plates are ideal for:

• Kiln Furniture: Widely used in high-temperature kilns for ceramics and glass production.
• Industrial Heat Treatment: Suitable for environments where consistent strength and heat tolerance are required.
• Support Materials: Perfect for structural support in high-temperature and high-stress industrial applications.

Technical Highlights

• Thermal Expansion Control: The thermal expansion rate is 4.7 x 10 at 1000°C, providing stability under fluctuating temperatures.
• High Hardness: With hardness levels of 2500 Kg/mm², the plates can withstand abrasive and tough environments.
• Efficient Heat Dissipation: Thermal conductivity of 20 W/m•K at 1200°C ensures effective heat management during operations.

Technical Parameters

Parameter	Value
SiC Content (%)	≤75
SiN Content (%)	≥25
Thermal Expansion Rate (x10 at 1000°C)	4.7
Hardness at 20°C (Kg/mm²)	2500
Thermal Conductivity at 1200°C (W/m•K)	20
High Temperature Flexural Strength (1200°C•0.5h) (MPa)	170~180
Suggested Working Temperature (°C)	<1450
Open Porosity (%)	<1
Bulk Density (g/cm³)	2.75~2.85