Aluminium Nitride Ceramic Substrate – High Thermal Conductivity & Electrical Insulation

• Customization: Available
• Application: Aerospace, Architectural, Ceramic Decorations, Electronics, Home Use, Medical, Refractory, Semiconductor
• Purity: 99%
• Model NO.: 100*100*1
• Type: Ceramic Plate
• Main Material: Andalusite, Alumina
• Working Temperature: <1600ºC
• Flatness: <0.5mm
• Colour: Gray-White
• V Shape Angle: Can Be Customized
• Transport Package: Wooden Boxes
• Specification: 100× 100× 1 mm
• Trademark: Moat City
• Origin: China
• HS Code: 6914900000
• Production Capacity: 1000000

Product Description

Aluminium Nitride Substrate [MH-ZT-Aluminium Nitride]

Product Features

Introducing our high-performance Aluminum Nitride (AlN) Substrate, designed to meet the demands of advanced electronic and thermal management applications:

• Exceptional Thermal Conductivity: More than 7 times higher thermal conductivity than alumina, ensuring superior heat dissipation.
• Silicon-Compatible Thermal Expansion: Coefficient of thermal expansion close to that of silicon, providing high reliability for large silicon chip loading and thermal cycling.
• High Electrical Insulation: Features excellent electrical insulation properties with a low dielectric constant.
• Superior Mechanical Strength: Offers better mechanical strength than alumina for improved structural integrity in high-performance applications.
• Corrosion Resistance: Exhibits good corrosion resistance to molten metals, extending the life of components.
• High Purity and Safety: Non-toxic, with very few impurities, ensuring safety and purity in demanding environments.

Applications

Aluminum Nitride substrates are ideal for:

• Heat Dissipation Substrates: Suitable for high-power electronics where efficient thermal management is essential.
• Substrate for LED Packaging: Ensures durability and performance for LED devices.
• Substrate for Semiconductors: Provides reliability and high thermal performance for semiconductor devices.
• Thin Film Circuit Substrate: Ideal for thin-film technology in advanced circuits.
• Substrate for Power Resistors: Designed for use in power resistor applications that require excellent heat dissipation.

Technical Highlights

• High Flexural Strength: With a flexural strength of 400 MPa and Young's modulus of 320 GPa, it provides excellent mechanical stability.
• Low Thermal Expansion: Coefficient of thermal expansion is 4.3 x 10 at 20°~300°C, matching the needs of temperature-sensitive applications.
• High Breakdown Strength: Ensures electrical integrity with a breakdown strength of ≥15 Kv/mm and dielectric constant of 9 at 1 MHz.

Technical Parameters

Parameter	Value
Material Number	AlN
Density (g/cm³)	3.33
Thermal Conductivity (25°C) W/(m.k)	≥170
Flexural Strength (MPa)	400
Young's Modulus (GPa)	320
Vickers Hardness (GPa)	≥11
Fracture Toughness (MPa•√m)	3.0
Warpage (long edge) %	≤2
Surface Roughness (µm)	0.2~0.6
Coefficient of Thermal Expansion at 20°~300°C (10)	4.3
Coefficient of Thermal Expansion at 300°~800°C (10)	5.0
Breakdown Strength (Kv/mm)	≥15
Dielectric Constant (1 MHz)	9
Volume Resistivity (20°C, Ω•cm)	≥10¹